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| F-34 01/99 NJ132L Process Silicon Junction Field-Effect Transistor Low-Noise Amplifier Absolute maximum ratings at TA = 25C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150C - 65C to +175C G S-D S-D G Die Size = 0.022" X 0.022" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ132L Process. Datasheet 2N6451, 2N6452 2N6453, 2N6454 IF1320 IFN152 2SK152 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage (pulsed) gfs gfs Ciss Ciss eN 15 15 15 3.5 1 mS mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 - 0.5 Min - 15 Typ - 25 - 50 - 100 100 -7 Max Unit V nA mA V NJ132L Process Test Conditions IG = - 1 A, VDS = OV VGS = - 10V, VDS = OV VDS = 10V, VGS = OV VDS = 10V, ID = 1 nA VDS = 10V, VGS = OV VDS = 10V, ID = 5 mA VDS = 10V, VGS = OV VDS = OV, VGS = - 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/HZ VDS = 4V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-35 NJ132L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = 2.5 V Drain Current as a Function of VGS(OFF) 10 IDSS = 8 mA 50 VGS = O V Drain Current in mA VGS = -0.5 V 30 VGS = -1.0 V 20 VGS = -1.5 V 10 VGS = -2.0 V 0 5 10 15 20 Drain Current in mA 40 8 6 125C 25C - 55C 4 2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 Drain to Source Voltage in Volts Gate Source Voltage in Volts Transconductance as a Function of Drain Current 50 Transconductance in mS 40 30 IDSS = 8 mA 20 10 IDSS = 40 mA 20 Capacitance as a Function of Gate Source Voltage Ciss Capacitance in pF 16 12 8 4 Crss 0 4 8 12 16 20 0 -2 -4 -6 -8 - 10 Drain Current in mA Gate Source Voltage in Volts Noise as a Function of Frequency Equivalent Noise Voltage (nV/Hz) Equivalent Noise Voltage (nV/Hz) 1.5 VDG = 4 V ID = 5 mA 1.0 2.0 Noise as a Function of Temperature f = 1 kHz 1.5 f = 10 kHz 1.0 0.5 0.5 10 100 1K Frequency in Hz 10K 100K 100 150 200 250 300 350 Temperature (K) |
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